PBYL2025 datasheet(3/5 Pages) PHILIPS

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Philips Semiconductors

Product specification

Rectifier diodes

PBYL2025 series

Schottky barrier

Fig.1. Maximum forward dissipation P

F = f(IF(AV));

square current waveform where I

F(AV) =IF(RMS) x √D.

Fig.2. Maximum forward dissipation P

F = f(IF(AV));

square current waveform where I

F(AV) =IF(RMS) x √D.

Fig.3. Typical and maximum forward characteristic

F = f(VF); parameter Tj

Fig.4. Typical reverse leakage current; I

R = f(VR);

parameter T

Fig.5. Typical junction capacitance; C

d = f(VR);

f = 1 MHz; T

j = 25˚C to 125 ˚C.

Fig.6. Transient thermal impedance; Z

th j-mb = f(tp).

0.5

0.2

0.1

PBYL2025

D = 1.0

Rs = 0.00875 Ohms

Vo = 0.27 V

Average forward current, IF(AV) (A)

Forward dissipation, PF (W)

Tmb(max) / C

150

D =

142.5

135

127.5

1uA

10uA

100uA

1mA

10mA

100mA

PBYR1625

VR / V

IR / A

Tj = 25 C

50 C

75 C

100 C

125 C

150 C

a = 1.57

1.9

2.2

2.8

PBYL2025

Rs = 0.00875 Ohms

Vo = 0.270 V

Average forward current, IF(AV) (A)

Forward dissipation, PF (W)

Tmb(max) / C

150

142.5

135

127.5

100

1000

10000

PBYR1625

VR / V

Cd / pF

0.2

0.4

0.6

0.8

PBYR1625

VF / V

IF / A

Tj = 25 C

Tj = 125 C

max

typ

1us

10us

100us

1ms

10ms

100ms

10s

0.001

0.01

0.1

PBYL1025

pulse width, tp (s)

Transient thermal impedance, Zth j-mb (K/W)

D =

March 1998

Rev 1.000

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