PBYL1520CTB datasheet(3/6 Pages) PHILIPS

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Philips Semiconductors

Product specification

Rectifier diodes

PBYL1525CT, PBYL1525CTB series

Schottky barrier

Fig.1. Maximum forward dissipation P

F = f(IF(AV)) per

diode; square current waveform where

F(AV) =IF(RMS) x √D.

Fig.2. Maximum forward dissipation P

F = f(IF(AV)) per

diode; square current waveform where

F(AV) =IF(RMS) x √D.

Fig.3. Typical and maximum forward characteristic

F = f(VF); parameter Tj

Fig.4. Typical reverse leakage current per diode;

R = f(VR); parameter Tj

Fig.5. Typical junction capacitance per diode;

d = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.

Fig.6. Transient thermal impedance; per diode;

th j-mb = f(tp).

PBYL1525CT

468

D = 1.0

0.5

0.2

0.1

Rs = 0.0213 Ohms

Vo = 0.29 V

Average forward current, IF(AV) (A)

Forward dissipation, PF (W)

Tmb(max) / C

150

D =

147

144

141

138

135

132

129

126

100mA

10mA

1mA

100uA

10uA

Reverse current, IR (A)

Reverse voltage, VR (V)

50 C

75 C

100 C

125 C

PBYR1045CTD

Tj = 25 C

456

a = 1.57

1.9

2.2

2.8

PBYL1525CT

Tmb(max) / C

135

138

141

144

147

150

Vo = 0.29 V

Rs = 0.0213 Ohms

Average forward current, IF(AV) (A)

Forward dissipation, PF (W)

100

1000

PBYR1025CTD

Reverse voltage, VR (V)

Junction capacitance, Cd (pF)

0.2

0.4

0.6

0.8

PBYR1025CTD

Forward voltage, VR (V)

Forward current, IF (A)

Tj = 25 C

Tj = 125 C

max

typ

1us

10us

100us

1ms

10ms

100ms

10s

0.001

0.01

0.1

PBYL1025

pulse width, tp (s)

Transient thermal impedance, Zth j-mb (K/W)

D =

March 1998

Rev 1.000

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