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2SD601A Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD601A Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() 2SD601A Silicon NPN Power Transistor www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCBO Collector-base voltage IC= 20uA, IE= 0 60 -- -- V VCEO Collector-emitter voltage IC= 2mA, IB= 0 50 -- -- V VEBO Emitter-base voltage IE= 10uA, IE= 0 7 -- -- V ICBO Collector-base current VCB= 20V, IE= 0 -- -- 0.1 uA ICEO Collector-emitter current VCE= 10V, IB= 0 -- -- 100 uA hFE DC Current Gain IC= 2mA, VCE= 10V 160 -- 460 VCE(sat) Collector-Emitter Saturation Voltage IC=100mA, IB= 10mA -- 0.1 0.3 V hFE Classifications ZQ ZR ZS 160-260 210-340 290-460 PACKAGE OUTLINE Dimensions in mm (1mm = 0.0394) |
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