Technical Data

Data Sheet N2115, Rev. A



China - Germany - Korea - Singapore - United States 



http://www.smc-diodes.com - sales@ smc-diodes.com 

SSTX404S

TRANSISTOR(Q1)

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Collector-base breakdown voltage

VCBO

IC=10μA, IE=0

60

V

Emitter-base breakdown voltage

VEBO

IE=10μA, IC=0

5

V

Collector cutoff current

ICBO

VCB=60V, IE=0

10

nA

Emitter cut-off current

IEBO

VEB=3V,IC=0

10

nA

DC current gain

hFE

hFE(1) IC=0.1mA,VCE=10V*

35

hFE(2) IC=1mA,VCE=10V*

50

hFE(3) IC=10mA,VCE=10V*

75

hFE(4) IC=150mA,VCE=10V*

100

300

hFE(5) IC=500mA,VCE=10V*

40

Collector-emitter saturation voltage

VCE(sat)

IC=150mA,IB=15mA*

IC=500mA,IB=50mA*

0.3

1

V

Base-emitter saturation soltage

VBE(sat)

IC=150mA,IB=15mA*

IC=500mA,IB=50mA*

0.6

1.2

2.0

V

Input Capacitance

Cib

VEB=0.5V,IC=0,f=1.0MHZ

15

pF

* Measured under pulsed conditions, Pulse width < 300 µs, duty cycle < 2%

DIODE(D1)

COMMON

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging

specification.

Electrical Characteristics @TA=25°C unless otherwise specified

Characteristics

Symbol

Condition

Min.

Typ.

Max.

Units

Forward Voltage Drop

VF1

IF=1mA

0.61

V

IF=10mA

0.74

IF=100mA

0.92

1.2

Characteristics

Symbol

Condition

Min.

Typ.

Max.

Units

Output Voltage

VO

IO=1mA, IB=0

40

V

Output Leakage Current

Io(off)

VO=40V, VEB=3V

0.5

uA

Output Capacitance

COb

VR=10V,IE=0,f=1MHZ

6.5

pF

Ordering Information

Device

Package

Shipping

Tape wide

Emboss pitch

SSTX404S

SOT-23

3000 pcs / reel

8mm

4mm