November 1994

2

Philips Semiconductors

Preliminary specification

Magnetic field sensor

KM110B/2

DESCRIPTION

The KM110B/2 is a sensitive magnetic field sensor,

employing the magnetoresistive effect in thin-film

permalloy. A Ferroxdure FXD100 magnet mounted on the

back of the sensor package provides an auxiliary field of

3.6 kA/m in the x-direction of the sensor.

Typical applications for the KM110B/2 are current

measurement, linear position measurement, rotational

speed detection of magnetic pole wheels as well as

magnetic field measurement. The sensor can be operated

at any frequency between DC and 1 MHz.

PINNING

PIN

SYMBOL

DESCRIPTION

output voltage

2

GND

ground

3

output voltage

supply voltage

MLB874

12

34

y

x

Fig.1 Simplified outline.

Marking: KMZ10B PHDxx.

QUICK REFERENCE DATA

CIRCUIT DIAGRAM

SYMBOL

PARAMETER

MIN.

TYP.

MAX.

UNIT

DC supply voltage

−

5

−

V

bridge operating temperature

−40

−

150

°C

magnetic field strength

−2.2

−

+2.2

kA/m

S

sensitivity

−

3.6

−

bridge resistance

1.6

2.1

2.6

k

Ω

offset voltage

−0.5

−

+0.5

mV/V

mV V

⁄

kA m

⁄

-----------------

Fig.2 Simplified circuit diagram.

handbook, full pagewidth

MLB875

43

2

1

V

CC

+VO

–VO

GND