J113 datasheet(2/6 Pages) PHILIPS

No. de pieza	J113

Descripción Electrónicos	N-channel silicon field-effect transistors

PDF	6 Pages

Scroll/Zoom	100%

Fabricante Electrónico	PHILIPS [NXP Semiconductors]

Página de inicio	http://www.nxp.com

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2 / 6 page

July 1993

Philips Semiconductors

Product speciﬁcation

N-channel silicon ﬁeld-effect transistors

J111; J112; J113

DESCRIPTION

Symmetrical silicon n-channel

junction FETs in plastic TO-92

envelopes. They are intended for

applications such as analog switches,

choppers, commutators etc.

FEATURES

• High speed switching

• Interchangeability of drain and

source connections

• Low R

DS on at zero gate voltage

PINNING

Note: Drain and source are

interchangeable.

1 = gate

2 = source

3 = drain

Fig.1 Simplified outline and symbol, TO-92.

handbook, halfpage

MAM042

QUICK REFERENCE DATA

J111

J112

J113

Drain-source voltage

±VDS

max.

Drain current

VDS = 15 V; VGS =0

IDSS

min.

Total power dissipation

up to Tamb =50 °CPtot

max.

400

Gate-source cut-off voltage

min.

max.

0.5

VDS = 5 V; ID =1 µA

−VGS off

Drain-source on-state resistance

VDS = 0.1 V; VGS =0

RDS on

max.

100

Ω

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