GSMBRTL20120 datasheet(1/2 Pages) ISC

No. de pieza	GSMBRTL20120

Descripción Electrónicos	Schottky Barrier Rectifier

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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Schottky Barrier Rectifier

GSMBRTL20120

www.iscsemi.com

2023-8-18

1

FEATURES

·Multi-layer Metal -Silicon Potential Structure

·Low Leakage Current

·High Current Capability, High Efficiency

·High Junction Temperature Capability

MECHANICAL CHARACTERISTICS

·Low Voltage High Frequency Switching Power Supply

·Low Voltage High Frequency Invers Circuit

·Low Voltage Continued Circuit and Protection Circuit

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VRRM

VRMS

VR

Peak Repetitive Reverse Voltage

RMS Voltage

DC Blocking Voltage

120

V

IF(AV)

Average Rectified Forward Current

Per Device

20

A

IF(AV)

Average Rectified Forward Current

Per Diode

10

A

IFSM

Nonrepetitive Peak Surge Current

8.3ms single half sine-wave superimposed on rated load

conditions

120

A

TJ

Junction Temperature

-55~150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

2.0

℃

/W

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GSMBRTL20120 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

GSMBRTL20120 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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