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2SA1091 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1091 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() 2SA1091 isc Silicon PNP Power Transistor www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)CBO Collector-base breakdown voltage IC= -100uA, IE= 0 -300 -- -- V V(BR)CEO Collector-emitter breakdown voltage IC= -1mA, IB= 0 -300 -- -- V VEB(sat) Base-Emitter Saturation Voltage IC= -20mA, IB= -2mA -- -- -1.2 V VCE(sat) Collector-Emitter Saturation Voltage IC= -20mA, IB= -2mA -- -- -0.5 V ICBO Collector Cutoff Current VCB= -300V; IE= 0 -- -- -0.1 uA IEBO Emitter Cutoff Current VEB = -8V; IC= 0 -- -- -0.1 uA hFE DC Current Gain IC= -20mA; VCE= -10V 30 -- 150 hFE DC Current Gain IC= -1mA; VCE= -10V 20 -- -- COB Output Capacitance IE= 0; VCB= -20V; f= 1MHz -- 6.0 8.0 pF fT Current-Gain—Bandwidth Product IC= -20mA ; VCE= -10V 40 60 -- MHz hFE1 Classifications R O 30-90 50-150 |
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