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SZA-3044 Datasheet(PDF) 2 Page - SIRENZA MICRODEVICES

No. de pieza SZA-3044
Descripción Electrónicos  2.7-3.8GHz 5V 1W Power Amplifier
PDF  8 Pages
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Fabricante Electrónico  SIRENZA [SIRENZA MICRODEVICES]
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SZA-3044 Datasheet(HTML) 2 Page - SIRENZA MICRODEVICES

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303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
2
EDS-103989 Rev E
SZA-3044 2.7-3.8 GHz 5V Power Amp
Pin Out Description
Pin #
Function
Description
1,2,4,5,7,
9,11,13,1
5,17,19
N/C
These are unused pins and not wired inside the package. They may be grounded or connected to adjacent pins.
6VPC1
VPC1 is the bias control pin for the stage 1 active bias circuit. An external series resistor is required for proper
setting of bias levels. Refer to the evaluation board schematic for resistor value. To prevent potential damage, do
not apply voltage to this pin that is +1V greater than voltage applied to pin 20 (Vbias) unless Vpc supply current
capability is less than 10 mA.
8VPC2
VPC2 is the bias control pin for the stage 2 active bias circuit. An external series resistor is required for proper
setting of bias levels. Refer to the evaluation board schematic for resistor value. To prevent potential damage, do
not apply voltage to this pin that is +1V greater than voltage applied to pin 20 (Vbias) unless Vpc supply current
capability is less than 10 mA.
10
Vdet
Output power detector voltage. Load with > 10K ohms for best performance
3
RFIN
RF input pin. This is DC grounded internal to the IC. Do not apply voltage to this pin.
12,14
RFOUT
RF output pin. This is also another connection to the 2nd stage collector.
16
VC2
2nd stage collector bias pin. Apply 3.0 to 5.0V to this pin.
18
VC1
1st stage collector bias pin. Apply 3.0 to 5.0V to this pin.
20
Vbias
Active bias network VCC. Apply 3.0 to 5.0V to this pin.
EPAD
Gnd
Exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for opti-
mum thermal and RF performance. Several vias should be located under the EPAD as shown in the recom-
mended land pattern (page 5).
Caution: ESD Sensitive
Appropriate precaution in handling, packaging
and testing devices must be observed.
Absolute Maximum Ratings
Parameters
Value
Unit
VC2 Collector Bias Current (IVC2)
600
mA
VC1 Collector Bias Current (IVC1)
300
mA
Device Voltage (VD)7.0
V
Power Dissipation
3.5
W
Operating Lead Temperature (TL)-40 to +85
ºC
Max RF Input Power for 50 ohm output
load
15
dBm
Max RF Input Power for 10:1 VSWR RF
out load
8dBm
Storage Temperature Range
-40 to +150
ºC
Operating Junction Temperature (TJ)
+150
ºC
ESD Human Body Model
2000
V
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continuous operation
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias conditions should also satisfy the following expression:
IDVD < (TJ - TL) / RTH’ j-l
Simplified Device Schematic
Stage 1
Bias
Stage 2
Bias
Pin 3
Pin 12, 14
Pin
20
Pin
6
Pin
18
Pin
8
Pin
16
Pin
10
EPAD
EPAD



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