4-271
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
1
2
3
5
4
RF OUT
GND
GND
GND
RF IN
RF2334
GENERAL PURPOSE AMPLIFIER
• Broadband, Low Noise Gain Blocks
• IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers
• Final PA for Low Power Applications
• Broadband Test Equipment
The RF2334 is a general purpose, low-cost RF amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as an easily-cas-
cadable 50
Ω gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 4000MHz.
The device is self-contained with 50
Ω input and output
impedances and requires only two external DC biasing
elements to operate as specified. The RF2334 is avail-
able in a very small industry-standard SOT23-5 surface
mount package, enabling compact designs which con-
serve board space.
• DC to 6000MHz Operation
• Internally matched Input and Output
• 16dB Small Signal Gain
• 5dB Noise Figure
• +18.5dBm Output Power
• Single Positive Power Supply
RF2334
General Purpose Amplifier
RF2334 PCBA
Fully Assembled Evaluation Board
0
Rev A10 030415
1
1.60
+ 0.01
0.400
2.80
+ 0.20
2.90
+ 0.10
0.45
+ 0.10
3° MAX
0° MIN
0.127
0.15
0.05
1.44
1.04
Dimensions in mm.
0.950
Package Style: SOT23-5
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