BFR93/BFR93R

TELEFUNKEN Semiconductors

Rev. A1, 17-Apr-96

1 (5)

Silicon NPN Planar RF Transistor

Applications

RF-amplifier up to GHz range specially for wide band antenna amplifier.

Features

D High power gain

D Low noise figure

D High transition frequency

23

1

94 9280

BFR93 Marking: R1

Plastic case (SOT 23)

1= Collector; 2= Base; 3= Emitter

32

1

95 10527

BFR93R Marking: R4

Plastic case (SOT 23)

1= Collector; 2= Base; 3= Emitter

Absolute Maximum Ratings

Parameters

Symbol

Value

Unit

Collector-base voltage

20

V

Collector-emitter voltage

12

V

Emitter-base voltage

2

V

Collector current

40

mA

Total power dissipation

200

mW

Junction temperature

150

°C

Storage temperature range

–65 to +150

°C

Maximum Thermal Resistance

Parameters

Symbol

Value

Unit

Junction ambient

450

K/W