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Motor de Búsqueda de Datasheet de Componentes Electrónicos |
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Motor de Búsqueda de Datasheet de Componentes Electrónicos |
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CES2301 Datasheet(PDF) 1 Page - Chino-Excel Technology |
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CES2301 Datasheet(HTML) 1 Page - Chino-Excel Technology |
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1 / 4 page  P-Channel Enhancement Mode Field Effect Transistor CES2301 FEATURES -20V, -2.8A, RDS(ON) = 100mΩ @VGS = -4.5V. RDS(ON) = 150mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23 package. ABSOLUTE MAXIMUM RATINGS T A = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS ID PD IDM -20 1.25 -10 -2.8 ±8 V W A A V 7 - 6 S G D G D S SOT-23 Lead free product is acquired. 2005.February http://www.cetsemi.com Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Ambient b Parameter Symbol Limit Units C/W 100 R θJA |
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