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BYW96 Datasheet(PDF) 2 Page - NXP Semiconductors

No. de pieza BYW96
Descripción Electrónicos  Fast soft-recovery controlled avalanche rectifiers
PDF  8 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYW96 Datasheet(HTML) 2 Page - NXP Semiconductors

  BYW96 Datasheet HTML 1Page - NXP Semiconductors BYW96 Datasheet HTML 2Page - NXP Semiconductors BYW96 Datasheet HTML 3Page - NXP Semiconductors BYW96 Datasheet HTML 4Page - NXP Semiconductors BYW96 Datasheet HTML 5Page - NXP Semiconductors BYW96 Datasheet HTML 6Page - NXP Semiconductors BYW96 Datasheet HTML 7Page - NXP Semiconductors BYW96 Datasheet HTML 8Page - NXP Semiconductors  
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1996 Jun 07
2
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYW96 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack
• Also available with preformed leads
for easy insertion.
DESCRIPTION
Rugged glass SOD64 package,
using a high temperature alloyed
construction. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
Fig.1 Simplified outline (SOD64) and symbol.
2/3 page (Datasheet)
MAM104
ka
,

,

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYW96D
800
V
BYW96E
1000
V
VR
continuous reverse voltage
BYW96D
800
V
BYW96E
1000
V
IF(AV)
average forward current
Ttp =50 °C; lead length = 10 mm
see Fig.2;
averaged over any 20 ms period;
see also Fig.6
3A
IF(AV)
average forward current
Tamb =55 °C; PCB mounting (see
Fig.11); see Fig.3;
averaged over any 20 ms period;
see also Fig.6
1.25
A
IFRM
repetitive peak forward current
Ttp =50 °C; see Fig.4
30
A
Tamb =55 °C; see Fig.5
13
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj =Tj max prior to surge;
VR =VRRMmax
70
A
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj =Tj max prior to
surge; inductive load switched off
10
mJ
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
see Fig.7
−65
+175
°C



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