BYW29F datasheet(2/6 Pages) PHILIPS

2 / 6 page

Philips Semiconductors

Product specification

Rectifier diodes

BYW29F series

ultrafast

ISOLATION

hs = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

isol

Repetitive peak voltage from

R.H.

≤ 65% ; clean and dustfree

1500

both terminals to external

heatsink

isol

Capacitance from cathode to

f = 1 MHz

external heatsink

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

th j-hs

Thermal resistance junction to

with heatsink compound

5.5

K/W

mounting base

without heatsink compound

7.2

K/W

th j-a

Thermal resistance junction to

in free air

K/W

ambient

STATIC CHARACTERISTICS

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Forward voltage

F = 8 A; Tj = 150˚C

0.80

0.895

F = 8 A

0.92

1.05

F = 20 A

1.1

1.3

Reverse current

R = VRWM; Tj = 100 ˚C

0.3

0.6

R = VRWM

µA

DYNAMIC CHARACTERISTICS

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Reverse recovery charge

F = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs

Reverse recovery time

F = 1 A; VR ≥ 30 V;

-dI

F/dt = 100 A/µs

rrm

Peak reverse recovery current

F = 10 A; VR ≥ 30 V; Tj = 100 ˚C;

-dI

F/dt = 50 A/µs

Forward recovery voltage

F = 1 A; dIF/dt = 10 A/µs

October 1994

Rev 1.100

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