Philips Semiconductors

Product specification

Rectifier diodes

BYV72F series

ultrafast

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated, high efficiency,

SYMBOL

PARAMETER

MAX.

MAX.

MAX.

UNIT

dual, rectifier diodes in a full pack,

plastic

envelope,

featuring

low

BYV72F-

100

150

200

forward

voltage

drop,

ultra-fast

V

RRM

Repetitive peak reverse

100

150

200

V

recovery times and soft recovery

voltage

characteristic. They are intended for

V

F

Forward voltage

0.90

0.90

0.90

V

use in switched mode power supplies

I

O(AV)

Output current (both

20

20

20

A

and high frequency circuits in general

diodes conducting)

where low conduction and switching

t

rr

Reverse recovery time

28

28

28

ns

losses are essential.

PINNING - SOT199

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

anode 1 (a)

2

cathode (k)

3

anode 2 (a)

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-100

-150

-200

V

RRM

Repetitive peak reverse voltage

-

100

150

200

V

V

RWM

Crest working reverse voltage

-

100

150

200

V

V

R

Continuous reverse voltage

1

-

100

150

200

V

I

O(AV)

Output current (both diodes

square wave;

δ = 0.5;

-

20

A

conducting)

2

T

sinusoidal; a = 1.57;

-

20

A

T

I

O(RMS)

RMS forward current

-

20

A

I

FRM

Repetitive peak forward current t = 25

µs; δ = 0.5;

-

30

A

per diode

T

I

FSM

Non-repetitive peak forward

t = 10 ms

-

150

A

current per diode

t = 8.3 ms

-

160

A

sinusoidal; with reapplied

V

RWM(max)

I

t = 10 ms

-

112

A

T

stg

Storage temperature

-40

150

˚C

T

j

Operating junction temperature

-

150

˚C

12

3

case

k

a1

a2

13

2

1 T

2 Neglecting switching and reverse current losses.

October 1994

1

Rev 1.100