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ZTX651 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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ZTX651 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() ISB3009 eq ZTX651 Silicon NPN Power Transistor www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 5 -- V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 60 -- V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 80 -- V ICBO Collector Cutoff Current VCB = 60V; IE= 0 -- 0.1 uA IEBO Emitter Cutoff Current VEB = 4V; IC= 0 -- 0.1 uA VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 100mA -- 0.3 V IC= 2A; IB= 200mA -- 0.5 VBE(sat) Base -Emitter Saturation Voltage IC= 1A; IB= 100mA -- 1.25 V VBE(on) Base-EmitterTurn-On Voltage IC= 1A; VCE = 2V -- 1.0 V fT Transition Frequency IC=100mA, VCE=5V,f=100MHz 140 175 MHz Cobo Output Capacitance VCB=10V, f=1MHz 30 pF |
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