BAV316 datasheet(1/4 Pages) DGNJDZ

No. de pieza	BAV316

Descripción Electrónicos	SOD-323 Plastic-Encapsulate Transistors

PDF	4 Pages

Scroll/Zoom	100%

Fabricante Electrónico	DGNJDZ [Nanjing International Group Co]

Página de inicio	http://www.dgnjdz.com/

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1 / 4 page

The marking bar indicates the cathode

BAV316

SWITCHING DIODE

FEATURES



Very Small Plastic Package



High Switching Speed

APPLICATIONS



High-Speed Switching in e.g. Surface Mounted Circuits

MARKING: XX

MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )

Symbol

Parameter

Value

Unit

VRRM

Peak Repetitive Reverse Voltage

130

VR

DC Blocking Voltage

130

V

IO

Continuous Forward Current

215

mA

PD

250

mW

RθJA

500

℃

/W

℃

TJ,Tstg

Non-repetitive Peak Forward Surge Current@t= 8.3ms

Power Dissipation

Thermal Resistance from Junction to Ambient

Operation Junction and Storage Temperature Range

-55~+150

ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)

SOD-323

IFSM

A

2.0

XX

Parameter

Symbol

Min

Typ

Max

Unit

Conditions

Reverse breakdown voltage

V (BR)

130

IR=100μA

VF1

0.85

V

IF=1mA

VF2

0.95

IF=10mA

VF3

1

V

F=50mA

Forward voltage

VF4

1.1

F=150mA

Reverse current

IR

5

nA

VR=75V

Diode capacitance

Ctot

2

pF

VR=0V,f=1MHz

Reverse recovery time

trr

3

μs

IF=IR=10mA,Irr=0.1×IR ,

RL=100Ω

V

I

DONGGUAN NANJING ELECTRONICS LTD.,

1/4

Dongguan Nanjing Electronics Ltd.

www.dgnjdz.com

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BAV316 Datasheet(PDF) 1 Page - Nanjing International Group Co

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