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MC10153 Datasheet(PDF) 3 Page - ON Semiconductor

No. de pieza MC10153
Descripción Electrónicos  Quad Latch
PDF  8 Pages
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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MC10153 Datasheet(HTML) 3 Page - ON Semiconductor

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ELECTRICAL CHARACTERISTICS (continued)
TEST VOLTAGE VALUES (Volts)
@ Test Temperature
VIHmax
VILmin
VIHAmin
VILAmax
VEE
–30
°C
–0.890
–1.890
–1.205
–1.500
–5.2
+25
°C
–0.810
–1.850
–1.105
–1.475
–5.2
+85
°C
–0.700
–1.825
–1.035
–1.440
–5.2
Pin
Under
TEST VOLTAGE APPLIED TO PINS LISTED BELOW
(V
)
Characteristic
Symbol
Under
Test
VIHmax
VILmin
VIHAmin
VILAmax
VEE
(VCC)
Gnd
Power Supply Drain Current
IE
8
13
8
1, 16
Input Current
IinH
3
4
5
13
3
4
5
13
8
8
8
8
1, 16
1, 16
1, 16
1, 16
IinL
3
3
8
1, 16
Output Voltage
Logic 1
VOH
2
2
3
3
4
13
8
8
1, 16
1, 16
Output Voltage
Logic 0
VOL
2
2
2
3,5
3,13
13
3,4
8
8
8
1, 16
1, 16
1, 16
Threshold Voltage
Logic 1
VOHA
2
2
2
2
[
2
]
2
]
2
2
3
3
3
3
3
4
4
4
3
5
4
13
8
8
8
8
8
8
8
8
1, 16
1, 16
1, 16
1, 16
1, 16
1, 16
1, 16
1, 16
Threshold Voltage
Logic 0
VOLA
2
2
2
2
[
2
]
2
]
3
3
3
4
4
4
5
3
13
8
8
8
8
8
8
1, 16
1, 16
1, 16
1, 16
1, 16
1, 16
Switching Times
(50
Ω Load)
+1.11 V
Pulse In
Pulse Out
–3.2 V
+2.0 V
Propagation Delay
t3+2+
t4–2+
t5–2+
tsetup
thold
2
2
2
3
3
3*
3
4
5
3
3
2
2
2
2
2
8
8
8
8
8
1, 16
1, 16
1, 16
1, 16
1, 16
Rise Time
(20 to 80%)
t2+
2
3
2
8
1, 16
Fall Time
(20 to 80%)
t2–
2
3
2
8
1, 16
[ Output level to be measured after a clock pulse has been applied to the clock input (Pin 4)
VIHmax
VILmin
] Data input at proper high/low level while clock pulse is high so that device latches ar proper high/low level for test. Levels are measured after
device has latched.
* Latch set to zero state before test.
Each MECL 10,000 series circuit has been designed to meet the dc specifications shown in the test table, after thermal equilibrium has been
established. The circuit is in a test socket or mounted on a printed circuit board and transverse air flow greater than 500 linear fpm is maintained.
Outputs are terminated through a 50–ohm resistor to –2.0 volts. Test procedures are shown for only one gate. The other gates are tested in the
same manner.



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