BUT12AF datasheet(2/12 Pages) PHILIPS

2 / 12 page

1997 Aug 13

Philips Semiconductors

Product speciﬁcation

Silicon diffused power transistors

BUT12F; BUT12AF

DESCRIPTION

High-voltage, high-speed,

glass-passivated NPN power

transistor in a SOT186 plastic

package.

APPLICATIONS

• Converters

• Inverters

• Switching regulators

• Motor control systems.

PINNING

DESCRIPTION

base

collector

emitter

mounting base; electrically isolated from all pins

handbook, halfpage

MBK109

1 23

handbook, halfpage

MBB008

Fig.1 Simplified outline (SOT186) and symbol.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

VCESM

collector-emitter peak voltage

VBE =0

BUT12F

850

BUT12AF

1000

VCEO

collector-emitter voltage

open base

BUT12F

400

BUT12AF

450

VCEsat

collector-emitter saturation voltage

see Figs 7 and 9

1.5

ICsat

collector saturation current

BUT12F

BUT12AF

collector current (DC)

see Figs 2 and 4

ICM

collector current (peak value)

see Fig.2

Ptot

total power dissipation

Th ≤ 25 °C; see Fig.3

fall time

resistive load; see Figs 11 and 12

0.8

µs

BUT12AF Datasheet(PDF) 2 Page - NXP Semiconductors

BUT12AF Datasheet(HTML) 2 Page - NXP Semiconductors

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