MMBT5401-AE3-R datasheet(2/4 Pages) UTC

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MMBT5401

PNP EPITAXIAL SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

QW-R206-011.C

ABSOLUATE MAXIUM RATINGS (Ta = 25℃)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector -Base Voltage

VCBO

-160

Collector -Emitter Voltage

VCEO

-150

Emitter -Base Voltage

VEBO

-5

DC Collector Current

-600

Power Dissipation

350

Operating Temperature

+150

℃

Storage Temperature

TSTG

-40 ~ +150

℃

ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

VCBO

IC=-100µA, IE=0

-160

Collector-Emitter Breakdown Voltage

VCEO

IC=-1mA, IB=0

-150

Emitter-Base Breakdown Voltage

VEBO

IE=-10µA, IC=0

-6

Collector Cut-off Current

ICBO

VCB=-120V, IE=0

-50

Emitter Cut-off Current

IEBO

VBE=-3V, Ic=0

-50

DC Current Gain(note)

hFE

VCE=-5V, Ic=-1mA

VCE=-5V, Ic=-10mA

VCE=-5V, Ic=-50mA

400

Collector-Emitter Saturation Voltage

VCE(sat)

IC=10mA, IB=1mA

IC=50mA, IB=5mA

-0.2

-0.5

Base-Emitter Saturation Voltage

VBE(sat)

IC=-10mA, IB=-1mA

IC=-50mA, IB=-5mA

Current Gain Bandwidth Product

VCE=-10V, Ic=-10mA, f=100MHz

100

400

MHz

Output Capacitance

Cob

VCB=-10V, IE=0, f=1MHz

6.0

Noise Figure

IC=-0.25mA, VCE=-5V

RS=1kΩ, f=10Hz ~ 15.7kHz

Note: Pulse test: PW<300

µs, Duty Cycle<2%

CLASSIFICATION OF hFE

RANK

RANGE

80-170

150-240

200-400

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