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GA100JT12 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza GA100JT12
Descripción Electrónicos  isc N-Channel Transistor
PDF  4 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

GA100JT12 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  GA100JT12 Datasheet HTML 1Page - Inchange Semiconductor Company Limited GA100JT12 Datasheet HTML 2Page - Inchange Semiconductor Company Limited GA100JT12 Datasheet HTML 3Page - Inchange Semiconductor Company Limited GA100JT12 Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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isc N-Channel Transistor
GA100JT12
www.iscsemi.com
2023-9-26
1
DESCRIPTION
·
Optional Gate Return Pin
·
Exceptional Safe Operating Area
·
Excellent Gain Linearity
·
Positive Temperature Coefficient of RDS,ON
APPLICATIONS
·
DC-DC converters
·
Pulse Generators
·
DC Choppers
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
1200
V
VSD
Diode Forward On-Voltage
25
V
VSG
Reverse Gate Source Voltage
30
V
ID
Drain Current-continuous@ TC=25℃
160
A
ID
Drain Current-continuous@ TC=115℃
100
A
IG
Continuous Gate Current
7
A
IGR
Continuous Gate Return Current
7
A
IDM
Pulse Drain Current
264
A
PD
Total Dissipation@TC=25℃
535
W
PD
Total Dissipation@TC=115℃
214
W
TJ
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature Range
-55~175
℃


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