MJH11017_06 datasheet(1/6 Pages) ONSEMI

No. de pieza	MJH11017

Descripción Electrónicos	15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150??50 VOLTS, 150 WATTS

PDF	6 Pages

Scroll/Zoom	100%

Fabricante Electrónico	ONSEMI [ON Semiconductor]

Página de inicio	http://www.onsemi.com

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July, 2006 − Rev. 6

1

Publication Order Number:

MJH11017/D

MJH11017, MJH11019,

MJH11021(PNP)

MJH11018, MJH11020,

MJH11022(NPN)

Preferred Device

Complementary Darlington

Silicon Power Transistors

These devices are designed for use as general purpose amplifiers,

low frequency switching and motor control applications.

Features

• High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types)

• Collector−Emitter Sustaining Voltage

VCEO(sus) = 150 Vdc (Min) — MJH11018, 17

= 200 Vdc (Min) — MJH11020, 19

= 250 Vdc (Min) — MJH11022, 21

• Low Collector−Emitter Saturation Voltage

VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A

= 1.8 V (Typ) @ IC = 10 A

• Monolithic Construction

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

Symbol

Max

Unit

Collector−Emitter Voltage

MJH11018, MJH11017

MJH11020, MJH11019

MJH11022, MJH11021

VCEO

150

200

250

Vdc

Collector−Base Voltage

MJH11018, MJH11017

MJH11020, MJH11019

MJH11022, MJH11021

VCB

150

200

250

Vdc

Emitter−Base Voltage

VEB

5.0

Vdc

Collector Current

− Continuous

− Peak (Note 1)

IC

15

30

Adc

Base Current

IB

0.5

Adc

Total Device Dissipation @ TC = 25_C

Derate above 25

_C

PD

150

1.2

W

W/

_C

Operating and Storage Junction Temperature

Range

TJ, Tstg

–65 to

+150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

0.83

_C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle

v 10%.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Preferred devices are recommended choices for future use

and best overall value.

SOT−93

(TO−218)

CASE 340D

STYLE 1

15 AMPERE DARLINGTON

COMPLEMENTARY SILICON

POWER TRANSISTORS

150−250 VOLTS, 150 WATTS

MARKING

DIAGRAM

http://onsemi.com

AYWWG

MJH110xx

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

MJH110xx = Device Code

xx = 17, 19, 21, 18, 20, 22

Device

Package

Shipping

ORDERING INFORMATION

MJH11017

SOT−93

30 Units / Rail

MJH11017G

SOT−93

(Pb−Free)

30 Units / Rail

MJH11018

SOT−93

30 Units / Rail

MJH11018G

SOT−93

(Pb−Free)

30 Units / Rail

MJH11019

SOT−93

30 Units / Rail

MJH11019G

SOT−93

(Pb−Free)

30 Units / Rail

MJH11020

SOT−93

30 Units / Rail

MJH11020G

SOT−93

(Pb−Free)

30 Units / Rail

MJH11021

SOT−93

30 Units / Rail

MJH11021G

SOT−93

(Pb−Free)

30 Units / Rail

MJH11022

SOT−93

30 Units / Rail

MJH11022G

SOT−93

(Pb−Free)

30 Units / Rail

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