NAND04GA3C2A datasheet(20/51 Pages) STMICROELECTRONICS

No. de pieza	NAND04GA3C2A

Descripción Electrónicos	4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory

PDF	51 Pages

Scroll/Zoom	100%

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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6 Device operations

NAND04GA3C2A, NAND04GW3C2A

20/51

Figure 6.

Random Data Output

6.4

Cache Read

The Cache Read operation is used to improve the read throughput by reading data using

the Cache Register. As soon as the user starts to read one page, the device automatically

loads the next page into the Cache Register.

An Cache Read operation consists of three steps (see Table 8):

One bus cycle is required to setup the Cache Read command (the same as the

standard Read command).

Five bus cycles are then required to input the Start Address (refer to Table 6).

One bus cycle is required to issue the Cache Read confirm command to start the P/E/R

Controller.

The Start Address must be at the beginning of a page (Column Address = 000h, see Table

7.). This allows the data to be output uninterrupted after the latency time (tBLBH1), see

Figure 7.

I/O

Address

Inputs

ai08658b

Data Output

Busy

tBLBH1

(Read Busy time)

000h

Cmd

Code

30h

Address

Inputs

Data Output

05h

E0h

5 Add cycles

Main Area

Spare

Area

Col Add 1,2

Row Add 1,2,3

Cmd

Code

Cmd

Code

Cmd

Code

2Add cycles

Main Area

Spare

Area

Col Add 1,2

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