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MBR120LSFT3 Datasheet(PDF) 2 Page - ON Semiconductor

No. de pieza MBR120LSFT3
Descripción Electrónicos  Surface Mount Schottky Power Rectifier
PDF  6 Pages
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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MBR120LSFT3 Datasheet(HTML) 2 Page - ON Semiconductor

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MBR120LSFT1
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MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20
V
Average Rectified Forward Current (At Rated VR, TL = 115°C)
IO
1.0
A
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 100 kHz, TL = 110°C)
IFRM
2.0
A
Non−Repetitive Peak Surge Current
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
IFSM
50
A
Storage Temperature
Tstg
−55 to 150
°C
Operating Junction Temperature
TJ
−55 to 125
°C
Voltage Rate of Change (Rated VR, TJ = 25°C)
dv/dt
10,000
V/
ms
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Thermal Resistance − Junction−to−Lead (Note 1)
Thermal Resistance − Junction−to−Lead (Note 2)
Thermal Resistance − Junction−to−Ambient (Note 1)
Thermal Resistance − Junction−to−Ambient (Note 2)
Rtjl
Rtjl
Rtja
Rtja
26
21
325
82
°C/W
1. Mounted with minimum recommended pad size, PC Board FR4.
2. Mounted with 1 in. copper pad (Cu area 700 mm2).
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3), See Figure 2
VF
TJ = 25°C
TJ = 85°C
V
(IF = 0.1 A)
(IF = 1.0 A)
(IF = 3.0 A)
0.34
0.45
0.65
0.26
0.415
0.67
Maximum Instantaneous Reverse Current (Note 3), See Figure 4
IR
TJ = 25°C
TJ = 85°C
mA
(VR = 20 V)
(VR = 10 V)
0.40
0.10
25
18
3. Pulse Test: Pulse Width
≤ 250 ms, Duty Cycle ≤ 2%.



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