DAP222G datasheet(2/5 Pages) ONSEMI

No. de pieza	DAP222G

Descripción Electrónicos	Common Anode Silicon Dual Switching Diodes

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Fabricante Electrónico	ONSEMI [ON Semiconductor]

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DAP222, DAP202U

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ELECTRICAL CHARACTERISTICS (TA = 25°C)

Characteristic

Symbol

Condition

Min

Max

Unit

Reverse Voltage Leakage Current

VR = 70 V

−

0.1

mAdc

Forward Voltage

IF = 100 mA

−

1.2

Vdc

Reverse Breakdown Voltage

IR = 100 mA

−

Vdc

Diode Capacitance

VR = 6.0 V, f = 1.0 MHz

−

3.5

Reverse Recovery Time

DAP222

DAP202U

trr(2)

ttt(3)

IF = 5.0 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR

IF = 5.0 mA, VR = 6.0 V, RL = 50 W, Irr = 0.1 IR

−

4.0

10.0

1. t = 1

2. trr Test Circuit for DAP222 in Figure 4.

3. trr Test Circuit for DAP202U in Figure 5.

TYPICAL ELECTRICAL CHARACTERISTICS

100

0.2

0.4

VF, FORWARD VOLTAGE (VOLTS)

0.6

0.8

1.0

1.2

1.0

0.1

VR, REVERSE VOLTAGE (VOLTS)

1.0

0.1

0.01

0.001

1.75

VR, REVERSE VOLTAGE (VOLTS)

1.5

1.25

1.0

0.75

Figure 1. Forward Voltage

Figure 2. Reverse Current

Figure 3. Diode Capacitance

TA = 150°C

TA = 125°C

TA = 85°C

TA = 55°C

TA = 25°C

TA = 85°C

TA = −40°C

TA = 25°C

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