2STR2215 datasheet(4/11 Pages) STMICROELECTRONICS

No. de pieza	2STR2215

Descripción Electrónicos	Low voltage fast-switching PNP power transistor

PDF	11 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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Electrical characteristics

2STR2215

4/11

Electrical characteristics

(Tcase = 25°C unless otherwise specified)

Note (2) Pulsed duration = 300

µs, duty cycle ≤1.5%

Table 3.

Electrical characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE =0)

VCB = -15V

-0.1

µA

IEBO

Emitter cut-off current

(IC =0)

VEB = -4V

-0.1

µA

V(BR)CBO

Collector-base

breakdown voltage

(IE = 0)

IC = -100µA

-15

V(BR)CEO (2)

Collector-emitter

breakdown voltage

(IB = 0)

IC = -10mA

-15

V(BR)EBO

Emitter-base breakdown

voltage (IC = 0)

IE = -100µA

-5

VCE(sat) (2) Collector-emitter

saturation voltage

IC = -100mA IB = -1mA

IC = -1A

IB = -100mA

IC = -2A

IB = -200mA

-0.25

-0.40

-0.15

-0.50

-0.85

VBE(sat) (2)

Base-emitter saturation

voltage

IC = -1A

IB = -100mA

-0.90

-1.25

hFE (2)

DC current gain

IC = -50mA

VCE = -2V

IC = -500mA VCE = -2V

IC = -1A

VCE = -2V

IC = -2A

VCE = -2V

200

130

280

560

CCBO

Collector-base

capacitance

IE = 0

VCB = -10V

f = 1MHz

ton

toff

Resistive load

Turn-on time

Turn-off time

IC = -1.5A

VCC = -10V

IB1 = -IB2 = -150mA

220

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