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TSH690 Datasheet(PDF) 4 Page - STMicroelectronics |
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TSH690 Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 14 page ![]() TSH690 4/14 ELECTRICAL CHARACTERISTICS AT 450 MHz Tamb = 25°C, V CC & Vbias = +2.7V, ZL = 50Ω, f = 450 MHz (unless otherwise specified) ELECTRICAL CHARACTERISTICS AT 900 MHz Tamb = 25°C, V CC & Vbias = +3V, ZL = 50Ω, f = 900 MHz (unless otherwise specified) Parameter1) 1. All min. and max. parameters of this table are garanteed by correlation with 900 MHz tests. Min. Typ. Max. Unit Power gain S21 (Pin = -20dBm) 20 23 30 dB Output Power 1dB Compression 8 12 dBm 3rd Order Intercept Point (f = 430MHz) 16 22 dBm Reverse Isolation S12 (f = 400MHz) -46 dB Input Return Loss S11 -10 -15 dB Noise Figure 4.5 dB Parameter1) 1. All min. and max. parameters of this table are garanteed by test. Min. Typ. Max. Unit Power gain S21 (Pin = -20dBm) 19 21 dB Output Power at 1dB compression point +12 +14.3 dBm Output power, Pin = -7 dBm +10 +11.7 dBm 3rd Order Intercept Point +25 dBm Reverse Isolation S12 -35 dB Input Return Loss S11 -14 dB Output Return Loss S22 -4.5 dB Noise figure 5.4 dB |
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