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K4M28163PH-RBE Datasheet(PDF) 6 Page - Samsung semiconductor

No. de pieza K4M28163PH-RBE
Descripción Electrónicos  2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
PDF  12 Pages
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Fabricante Electrónico  SAMSUNG [Samsung semiconductor]
Página de inicio  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K4M28163PH-RBE Datasheet(HTML) 6 Page - Samsung semiconductor

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K4M28163PH - R(B)E/G/C/F
March 2006
6
Mobile SDRAM
1.8V
13.9K
Ω
10.6K
Ω
Output
20pF
VOH (DC) = VDDQ - 0.2V, IOH = -0.1mA
VOL (DC) = 0.2V, IOL = 0.1mA
Vtt=0.5 x VDDQ
50
Ω
Output
20pF
Z0=50
Ω
Figure 2. AC Output Load Circuit
Figure 1. DC Output Load Circuit
AC OPERATING TEST CONDITIONS(VDD = 1.7V ∼ 1.95V, TA = -25 ~ 85°C for Extended, -25 ~ 70°C for Commercial)
Parameter
Value
Unit
AC input levels (Vih/Vil)
0.9 x VDDQ / 0.2
V
Input timing measurement reference level
0.5 x VDDQ
V
Input rise and fall time
tr/tf = 1/1
ns
Output timing measurement reference level
0.5 x VDDQ
V
Output load condition
See Figure 2



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