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B2D20120HC Datasheet(PDF) 2 Page - BASIC SEMICONDUCTOR |
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B2D20120HC Datasheet(HTML) 2 Page - BASIC SEMICONDUCTOR |
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2 / 7 page ![]() Rev. 0.1 www.basicsemi.com 2 / 7 Maximum Ratings (TC=25℃ unless otherwise specified) SiC Schottky Diode B2D20120HC Symbol Parameter Test conditions Value Unit VRRM Repetitive peak reverse voltage 1200 V VRSM Non-repetitive peak reverse voltage 1200 V IF Continuous forward current TC=25°C TC=155°C 36*/72** 10*/20** A IFSM Non-Repetitive forward surge current TC=25°C , tp=10ms, Half Sine Wave 85* A ∫i2dt i2t value TC=25°C ,tp=10ms 36.12* A2S Ptot Power dissipation TC=25°C TC=110°C 156* 67* W Tj Operating junction temperature - 55~175 °C Tstg Storage temperature - 55~175 °C TO-247 mounting torque M3 Screw 0.7 Nm * Per Leg, ** Per Device Thermal Characteristics Symbol Parameter Value Unit Min. Typ. Max. Rth(jc) Thermal resistance from junction to case 0.96* 0.48** K/W * Per Leg, ** Per Device |
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