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B2D08065KS Datasheet(PDF) 1 Page - BASIC SEMICONDUCTOR

No. de pieza B2D08065KS
Descripción Electrónicos  SiC Schottky Diode
PDF  7 Pages
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Fabricante Electrónico  BASICSEMI [BASIC SEMICONDUCTOR]
Página de inicio  https://www.basicsemi.com/
Logo BASICSEMI - BASIC SEMICONDUCTOR

B2D08065KS Datasheet(HTML) 1 Page - BASIC SEMICONDUCTOR

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Rev. 0.1
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SiC Schottky Diode
VRRM
= 650 V
IF (TC=150°C)
= 8 A
QC
= 24 nC
Features
⚫
Ceramic package provides 2.5kV isolation
⚫
Extremely low reverse current
⚫
No reverse recovery current
⚫
Temperature independent switching
⚫
Positive temperature coefficient on VF
⚫
Excellent surge current capability
⚫
Low capacitive charge
B2D08065KS
Benefits
⚫
Electrically
isolated package
⚫
Essentially no switching losses
⚫
System efficiency improvement over Si diodes
⚫
Increased power density
⚫
Enabling higher switching frequency
⚫
Reduction of heat sink requirements
⚫
System cost savings due to smaller magnetics
⚫
Reduced EMI
Applications
⚫
Switch mode power supplies (SMPS)
⚫
Uninterruptible power supplies
⚫
Motor drivers
⚫
Power factor correction
⚫
Pin1- Cathode
⚫
Pin2- Anode
Package Pin Definitions
Package Parameters
Part Number
Marking
Package
B2D08065KS
B2D08065KS
TO-220-isolated
1
2
TO-220-isolated
2
1


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