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PCMF3USB3B/C Datasheet(PDF) 10 Page - Nexperia B.V. All rights reserved

No. de pieza PCMF3USB3B/C
Descripción Electrónicos  Common-mode EMI filter for differential channels with integrated bidirectional ESD protection
PDF  20 Pages
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Fabricante Electrónico  NEXPERIA [Nexperia B.V. All rights reserved]
Página de inicio  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved

PCMF3USB3B/C Datasheet(HTML) 10 Page - Nexperia B.V. All rights reserved

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Nexperia
PCMFxUSB3B/C series
Common-mode EMI filter for differential channels with integrated bidirectional ESD protection
VCL (V)
0
25
20
10
15
5
aaa-028357
10
15
5
20
25
I
(A)
0
Transmission Line Pulse (TLP) = 100 ns;
measured CH_IN to GND
Fig. 13. Dynamic resistance with positive clamping;
typical values
VCL (V)
-25
0
-5
-15
-10
-20
aaa-028358
-15
-10
-20
-5
0
I
(A)
-25
Transmission Line Pulse (TLP) = 100 ns;
measured CH_IN to GND
Fig. 14. Dynamic resistance with negative clamping;
typical values
VCL (V)
0
80
60
20
40
aaa-028359
40
20
60
80
I
(A)
0
Very-Fast Transmission Line Pulse
(VF-TLP) = 5 ns;
measured CH_IN to GND
Fig. 15. Dynamic resistance with positive clamping;
typical values
VCL (V)
-80
0
-20
-60
-40
aaa-028360
-40
-60
-20
0
I
(A)
-80
Very-Fast Transmission Line Pulse
(VF-TLP) = 5 ns;
measured CH_IN to GND
Fig. 16. Dynamic resistance with negative clamping;
typical values
The device uses an advanced clamping structure showing a negative dynamic resistance.
This snap-back behavior strongly reduces the clamping voltage to the system behind the ESD
protection during an ESD event. Do not connect unlimited DC current sources to the data lines to
avoid keeping the ESD protection device in snap-back state after exceeding breakdown voltage
(due to an ESD pulse for instance).
PCMFxUSB3B/C_SER
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2019. All rights reserved
Product data sheet
Rev. 2 — 29 January 2019
10 / 20



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