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STTH512B Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza STTH512B
Descripción Electrónicos  Ultrafast recovery - 1200 V diode
PDF  10 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STTH512B Datasheet(HTML) 3 Page - STMicroelectronics

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STTH512
Characteristics
3/10
S
Softness factor
IF = 5 A, dIF/dt = -200 A/µs,
VR = 600 V, Tj = 125° C
2
tfr
Forward recovery time
IF = 5 A
dIF/dt = 50 A/µs
VFR = 1.5 x VFmax, Tj = 25° C
400
ns
VFP
Forward recovery voltage
IF = 5 A, dIF/dt = 50 A/µs,
Tj = 25° C
9.5
V
Table 4.
Dynamic characteristics
Figure 1.
Conduction losses versus
average current
Figure 2.
Forward voltage drop versus
forward current
0
1
2
3
4
5
6
7
8
9
10
11
12
13
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
P(W)
T
δ=tp/T
tp
δ = 0.05
δ = 1
I
(A)
F(AV)
δ = 0.1
δ = 0.2
δ = 0.5
0
5
10
15
20
25
30
35
40
45
50
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
I
(A)
FM
V
(V)
FM
T =25°C
(maximum values)
j
T =150°C
(maximum values)
j
T =150°C
(typical values)
j
Figure 3.
Relative variation of thermal
impedance junction to case
versus pulse duration
Figure 4.
Relative variation of thermal
impedance junction to case versus
pulse duration
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
Z/R
th(j-c)
th(j-c)
t (s)
p
Single pulse
TO-220AC
DPAK
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
Z/R
th(j-c)
th(j-c)
t (s)
p
Single pulse
TO-220FPAC
Figure 5.
Peak reverse recovery current
versus dIF/dt (typical values)
Figure 6.
Reverse recovery time versus dIF/dt
(typical values)



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