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BU2508DF Datasheet(PDF) 3 Page - NXP Semiconductors

No. de pieza BU2508DF
Descripción Electrónicos  Silicon Diffused Power Transistor
PDF  7 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BU2508DF Datasheet(HTML) 3 Page - NXP Semiconductors

  BU2508DF Datasheet HTML 1Page - NXP Semiconductors BU2508DF Datasheet HTML 2Page - NXP Semiconductors BU2508DF Datasheet HTML 3Page - NXP Semiconductors BU2508DF Datasheet HTML 4Page - NXP Semiconductors BU2508DF Datasheet HTML 5Page - NXP Semiconductors BU2508DF Datasheet HTML 6Page - NXP Semiconductors BU2508DF Datasheet HTML 7Page - NXP Semiconductors  
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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508DF
Fig.1. 16kHz Switching times waveforms.
Fig.2. Switching times definitions.
Fig.3. 16kHz Switching times test circuit.
Fig.4. Typical DC current gain. h
FE = f (IC)
parameter V
CE
Fig.5. Typical base-emitter saturation voltage.
V
BEsat = f (IC); parameter IC/IB
Fig.6. Typical collector-emitter saturation voltage.
V
CEsat = f (IC); parameter IC/IB
IC
IB
VCE
ICsat
IBend
64us
26us
20us
t
t
t
TRANSISTOR
DIODE
0.01
1
IC / A
BU2508DF
100
10
1
0.1
10
Tj = 25 C
Tj = 125 C
5V
h FE
1V
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
0.1
1
10
IC / A
VBESAT / V
BU2508DF
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
Tj = 25 C
Tj = 125 C
IC/IB=
3
4
5
+ 150 v nominal
adjust for ICsat
1mH
12nF
D.U.T.
LB
IBend
-VBB
Rbe
0.1
1
10
IC / A
VCESAT / V
BU2508DF
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Tj = 25 C
Tj = 125 C
IC/IB=
4
5
3
July 1998
3
Rev 1.600



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