PTRA087008NB-V1-R2 datasheet(1/11 Pages) WOLFSPEED

No. de pieza	PTRA087008NB-V1-R2

Descripción Electrónicos	Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755 – 805 MHz

PDF	11 Pages

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Fabricante Electrónico	WOLFSPEED [WOLFSPEED, INC.]

Página de inicio	https://www.wolfspeed.com/

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Rev. 03.4, 2022-02-13

The information in this document is subject to change without notice.

4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300

PTRA087008NB

Package Types: PG-HB2SOF-6-1

Features

• Broadband internal input and output matching

• Asymmetric design

- Main: P

1dB = 245 W Typ

- Peak: P

1dB = 380 W Typ

• Typical pulsed CW performance, 805 MHz, 48 V,

Doherty configuration

- Output power at P

3dB = 650 W

- Efficiency = 52%

- Gain = 19.5 dB

• Capable of handling 10:1 VSWR @48 V, 30 W

(WCDMA) output power

• Human Body Model Class 2 (per ANSI/ESDA/JEDEC

JS-001)

• Integrated ESD protection

• Low thermal resistance

• RoHS-compliant

Thermally-Enhanced High Power RF LDMOS FET

650 W, 48 V, 755 – 805 MHz

Description

The PTRA087008NB is a 650-watt LDMOS FET. It is designed for use in multi-

standard cellular power amplifier applications from 755 MHz to 805 MHz.

Manufactured with Wolfspeed’s advanced LDMOS process, this device provides

excellent thermal performance and superior reliability.

RF Characteristics

Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture)

V

DD = 48 V, IDQ = 510 mA, POUT = 107 W avg, VGS(PEAK) = 2.4 V, ƒ = 805 MHz, 3GPP, channel bandwidth = 3.84 MHz,

peak/average = 10 dB @ 0.01% CCDF

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Gain

G

ps

17.5

18.5

—

dB

Drain Efficiency

h

D

48.5

52

—

%

Adjacent Channel Power Ratio

ACPR

—

–31

–28

dBc

Output PAR @ 0.01% CCDF

OPAR

6.7

-7.2

—

dB

Note:

All published data at T

CASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

-60

-40

-20

0

20

40

60

0

4

8

12

16

20

24

25

30

35

40

45

50

55

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 48 V, IDQ(MAIN) = 510 mA,

VGS(PEAK) = 2.4 V, ƒ = 805 MHz.

3GPP WCDMA signal, 10 dB PAR,

3.84 MHz bandwidth

Gain

Efficiency

PAR @ 0.01% CCDF

ra087008nb-gr1a

Número de pieza similar - PTRA087008NB-V1-R2

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Infineon Technologies A...	PTVA084007NF	491Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 ??805 MHz Rev. 03, 2017-08-30
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PTRA087008NB-V1-R2 Datasheet(PDF) 1 Page - WOLFSPEED, INC.

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