AlGaAs SPST Non-Reflective PIN Diode Switch

MA4AGSW1A

Rev 2.0

1

FEATURES

• Ultra Broad Bandwidth: 10 GHz to 50 GHz

• Functional Bandwidth: 100 MHz to 70 GHz

• 1.0 dB Insertion Loss, 35 dB Isolation at 50 GHz

• M/A-COM’s unique patent pending AlGaAs

hetero-junction anode technology.

• Silicon Nitride Passivation

• Polymide Scratch protection

DESCRIPTION

M/A-COM’s MA4AGSW1A is an Aluminum-Gallium

Arsenide anode enhanced, SPST Non-Reflective PIN diode

switch. AlGaAs anodes, which utilize M/A-COM’s patent

pending hetero-junction technology, produce less loss than

conventional GaAs processes, by as much as a 0.3 dB

reduction in insertion loss at 50 GHz. These devices are

fabricated on a OMCVD eptaxial wafer using a process

designed for high device uniformity and extremely low

parasitics. The diodes themselves exhibit lower series

resistance, lower capacitance, and faster switching speeds

than Silicon based devices. They are fully passivated with

silicon nitride and have an additional layer of a polymer for

scratch protection. The protective coating prevents damage to

the junction and the anode airbridges during handling. Off-

chip bias circuitry is required and allows for maximum

design flexibility.

APPLICATIONS

The output port of this device ( J2 ), is 50 Ω terminated

during Isolation mode, which allows this signal to be

absorbed rather than reflected back. This functionality makes

it ideal for instrumentation and radar applications. This

absorptive switch can be added to available reflective

AlGaAs switches to improve isolation VSWR and increase

isolation magnitude.

The ultra low capacitance of the PIN diodes makes it ideal for

usage in lower loss and higher isolation microwave and

millimeter wave switch designs through 70 GHz. The lower

series resistance of the AlGaAs diodes reduces the total

insertion loss and distortion of the devices. These AlGaAs

PIN switches are used as the switching arrays for radar

systems, radiometers, and other multi-function components.

MA4AGSW1A LAYOUT

ABSOLUTE MAXIMUM RATINGS

Parameter

MAXIMUM RATING

Operating Temperature

-55

° TO +125°C

Storage Temperature

-65

°C TO +150°C

Junction Temperature

+175

°C

Assembly Temperature

+300

°C for < 10 sec

Incident C.W. RF Power

+23 dBm C.W.

Reverse Voltage

| - 25 V |

Forward Bias Current

+/-25 mA

Note: Exceeding ANY of these values may result in

permanent damage

Maximum Operating Conditions forCombination of

RF Power, D.C. Bias, and Temperature:

+ 23 dBm C.W. @ 10 mA ( per Diode ) @ + 85

°C.