1995 Apr 07

6

Philips Semiconductors

Product specification

P-channel enhancement mode

vertical D-MOS transistor

BSS110

Fig.10 Temperature coefficient of gate-source

threshold voltage.

k

V

V

--------------------------------------

=

handbook, halfpage

0.6

0.8

1.0

1.2

0

50

100

150

50

k

T

( C)

j

o

MLD195

Fig.11 Temperature coefficient of drain-source

on-state resistance.

k

R

R

-----------------------------------------

=

handbook, halfpage

0.6

1.0

1.4

1.8

0

50

100

150

50

k

T

( C)

j

o

MLD194

(1)

(2)

Fig.12 Thermal resistance from junction to ambient as a function of pulse time; typical values.

handbook, full pagewidth

1

10

10

t p (s)

10

10

1

10

MLD192

(K/W)

R th j-a

1

10

5

10

6

10

3

10

4

10

2

10

2

3

1

10

t p

T

P

t

t p

T

δ =

0.75

0.5

0.1

0

0.05

0.01

0.02

0.2

2