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BSP121 Datasheet(PDF) 3 Page - NXP Semiconductors

No. de pieza BSP121
Descripción Electrónicos  N-channel enhancement mode vertical D-MOS transistor
PDF  12 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BSP121 Datasheet(HTML) 3 Page - NXP Semiconductors

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1998 Apr 01
3
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP121
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Note
1. Device mounted on an epoxy printed-circuit board 40 mm
× 40 mm × 1.5 mm; mounting pad for the drain lead
min. 6 cm2.
Drain-source voltage
VDS
max.
200 V
Gate-source voltage (open drain)
±V
GSO
max.
20 V
Drain current (DC)
ID
max.
350 mA
Drain current (peak)
IDM
max.
1.2 A
Total power dissipation up to
Tamb =25 °C (note 1)
Ptot
max.
1.5 W
Storage temperature range
Tstg
−65 to + 150 °C
Junction temperature
Tj
max.
150
°C
From junction to ambient (note 1)
Rthj-a
=
83.3 K/W



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