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LMH6321 Datasheet(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
No. de pieza LMH6321
Descripción Electrónicos  300 mA High Speed Buffer with Adjustable Current Limit
PDF  21 Pages
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Fabricante Electrónico  NSC [National Semiconductor (TI)]
Página de inicio  http://www.national.com
Logo NSC - National Semiconductor (TI)

LMH6321 Datasheet(HTML) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
ESD Tolerance (Note 2)
Human Body Model
2.5 kV
Machine Model
250V
Supply Voltage
36V (±18V)
Input to Output Voltage (Note 3)
±5V
Input Voltage
±V
SUPPLY
Output Short-Circuit to GND (Note 4)
Continuous
Storage Temperature Range
−65˚C to +150˚C
Junction Temperature (T
JMAX)
+150˚C
Lead Temperature
(Soldering, 10 seconds)
260˚C
Power Dissipation
(Note 8)
C
L Pin to GND Voltage
±1.2V
Operating Ratings
Operating Temperature Range
−40˚C to +125˚C
Operating Supply Range
5V to ±16V
Thermal Resistance (
θ
JA),
PSOP Package (Note 6)
180˚C/W
Thermal Resistance (
θ
JC)
TO-263 Package
4˚C/W
Thermal Resistance (
θ
JA)
TO-263 Package
80˚C/W
±15V Electrical Characteristics
The following specifications apply for Supply Voltage = ±15V, V
CM =0,RL
≥ 100 kΩ and R
S =50
Ω,C
L open, unless otherwise
noted. Boldface limits apply for T
A =TJ =TMIN to TMAX; all other limits TA =TJ = 25˚C.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
A
V
Voltage Gain
R
L =1k
Ω,V
IN = ±10V
0.99
0.98
0.995
V/V
R
L =50
Ω,V
IN = ±10V
0.86
0.84
0.92
V/V
V
OS
Input Offset Voltage
R
L =1k
Ω,R
S =0V
±4
±35
±52
mV
I
B
Input Bias Current
V
IN = 0V, RL =1k
Ω,R
S =0V
±2
±15
±17
µA
R.
IN
Input Resistance
R.
L =50
Ω
250
k
Ω
C
IN
Input Capacitance
3.5
pF
R
O
Output Resistance
I
O = ±10 mA
5
Ω
I
S
Power Supply Current
R
L = ∞,VIN = 0
11
14.5
16.5
mA
750 µA into
C
L Pin
14.9
18.5
20.5
V
O1
Positive Output Swing
I
O = 300 mA, RS = 0V, VIN = ±VS
11.2
10.8
11.9
V
Negative Output Swing
I
O = 300 mA, RS = 0V, VIN = ±VS
−11.3
−10.3
−9.8
V
O2
Positive Output Swing
R
L =1k
Ω,R
S = 0V, VIN = ±VS
13.1
12.9
13.4
V
Negative Output Swing
R
L =1k
Ω,R
S = 0V, VIN = ±VS
−13.4
−12.9
−12.6
V
O3
Positive Output Swing
R
L =50
Ω,R
S = 0V, VIN = ±VS
11.6
11.2
12.2
V
Negative Output Swing
R
L =50
Ω,R
S = 0V, VIN = ±VS
−11.9
−10.9
−10.6
V
EF
Error Flag Output Voltage
R
L = ∞,VIN =0,
EF pulled up with 5 k
Ω
to +5V
Normal
5.00
V
During
Thermal
Shutdown
0.25
T
SH
Thermal Shutdown
Temperature
Measure Quantity is Die (Junction)
Temperature
168
˚C
Hysteresis
10
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