BRY62 datasheet(6/12 Pages) PHILIPS

No. de pieza	BRY62

Descripción Electrónicos	Silicon controlled switch

PDF	12 Pages

Scroll/Zoom	100%

Fabricante Electrónico	PHILIPS [NXP Semiconductors]

Página de inicio	http://www.nxp.com

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6 / 12 page

1999 Apr 22

Philips Semiconductors

Product speciﬁcation

Silicon controlled switch

BRY62

Fig.8 Test circuit for turn-off time.

handbook, halfpage

MBB684

+12 V

+50 V

VAK

RKG-K

mercury

wetted

contact

16 k

Ω

2.7 k

Ω

1 k

Ω

Fig.9

Capacitance increased until C = Copt

dashed curve disappears.

handbook, halfpage

MBB686

VAK

(V)

– 12

< Copt

= Copt

time

Fig.10 Normalized DC current gain as a function of

anode gate current.

X is the value of hFE at IC = 10 mA; VAG-K = 2 V; Tamb =25 °C.

handbook, halfpage

100

1.2

0.4

0.8

MBB584

hFE

IAG (mA)

VAG-K = 5 V

2 V

Fig.11 Normalized DC current gain as a function of

ambient temperature.

X is the value of hFE at IAG = 10 mA; VAG-K = 2 V; Tamb =25 °C.

handbook, halfpage

1.8

1.4

1.0

0.6

150

MBB583

100

( C)

amb

h FE

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