MMT10B350T3 datasheet(2/5 Pages) ONSEMI

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MMT10B350T3

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THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Operating Temperature Range Blocking or Conducting State

TJ1

−40 to + 125

°C

Overload Junction Temperature − Maximum Conducting State Only

TJ2

+ 175

°C

Maximum Lead Temperature for Soldering Purposes 1/8

″ from Case for 10 Seconds

260

°C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Devices are bidirectional. All electrical parameters apply to

forward and reverse polarities.

Characteristics

Symbol

Min

Typ

Max

Unit

Breakover Voltage (Both polarities)

(dv/dt = 100 V/

ms, ISC = 1.0 A, Vdc = 1000 V)

(+65

°C)

V(BO)

−

400

412

Breakover Voltage (Both polarities)

(f = 60 Hz, ISC = 1.0 A(rms), VOC = 1000 V(rms),

RI = 1.0 kW, t = 0.5 cycle) (Note 3)

(+65

°C)

V(BO)

−

400

412

Breakover Voltage Temperature Coefficient

dV(BO)/dTJ

−

0.12

−

°C

Breakdown Voltage (I(BR) = 1.0 mA) Both polarities

V(BR)

−

350

−

Off State Current (VD1 = 50 V) Both polarities

Off State Current (VD2 = VDM) Both polarities

ID1

ID2

−

2.0

5.0

On−State Voltage (IT = 1.0 A)

(PW

≤ 300 ms, Duty Cycle ≤ 2%) (Note 3)

−

1.82

5.0

Breakover Current (f = 60 Hz, VDM = 1000 V(rms), RS = 1.0 kW)

Both polarities

IBO

−

475

−

Holding Current (Both polarities) (Note 3)

VS = 500 V; IT (Initiating Current) = "1.0 A

150

300

−

Critical Rate of Rise of Off−State Voltage

(Linear waveform, VD = Rated VBR, TJ = 25°C)

dv/dt

2000

−

Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)

Capacitance (f = 1.0 MHz, 2.0 Vdc, 1.0 V rms Signal)

−

3. Measured under pulse conditions to reduce heating.

+ Current

+ Voltage

VTM

V(BO)

I(BO)

ID2

ID1

VD1

VD2 V(BR)

Symbol

Parameter

ID1, ID2

Off State Leakage Current

VD1, VD2

Off State Blocking Voltage

VBR

Breakdown Voltage

VBO

Breakover Voltage

IBO

Breakover Current

Holding Current

VTM

On State Voltage

Voltage Current Characteristic of TSPD

(Bidirectional Device)

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