BLF521 datasheet(3/14 Pages) PHILIPS

3 / 14 page

November 1992

Philips Semiconductors

Product speciﬁcation

UHF power MOS transistor

BLF521

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

THERMAL RESISTANCE

Note

1. Mounted on printed circuit board, see Fig.12.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS

drain-source voltage

−

±VGS

gate-source voltage

−

DC drain current

−

Ptot

total power dissipation

up to Tmb =25 °C

−

Tstg

storage temperature

−65

150

°C

junction temperature

−

200

°C

SYMBOL

PARAMETER

THERMAL

RESISTANCE

Rth j-mb

thermal resistance from junction to mounting base

17.5 K/W

Rth j-a

thermal resistance from junction to ambient (note 1)

75 K/W

Fig.2 DC SOAR.

(1) Current in this area may be limited by RDS(on).

(2) Tmb =25 °C.

handbook, halfpage

0.1

100

(1)

(A)

VDS (V)

MRA989

(2)

Fig.3 Power/temperature derating curves.

(1) Continuous operation.

(2) Short-time operation during mismatch.

handbook, halfpage

160

120

MDA486

(1)

(2)

Ptot

(W)

Tmb ( °C)

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