NJ7002KDM datasheet(1/5 Pages) DGNJDZ

No. de pieza	NJ7002KDM

Descripción Electrónicos	SOT-23 -6L Plastic-Encap sulate MOSFETS

PDF	5 Pages

Scroll/Zoom	100%

Fabricante Electrónico	DGNJDZ [Nanjing International Group Co]

Página de inicio	http://www.dgnjdz.com/

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1 / 5 page

Plastic-Encap sulate

MOSFETS

N-channel MOSFET

FEATURE

z

High density cell design for Low RDS（on）

z

Voltage controlled small signal switch

z

Rugged and reliable

z

High saturation current capability

MOSFET MAXIMUM RATINGS (Ta = 25

°C unless otherwise noted)

Symbol

Parameter

Value

Unit

VDS

Drain-Source voltage

60

V

ID

Drain Current

340

mA

PD

Power Dissipation

0.

15

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

RθJA

Thermal Resistance

fromJunction to Ambient

833

℃ /W

z

ESD protected

VGS

Gate-Source voltage

±20

V

MARKING

Equivalent Circuit

APPLICATION

Load Switch for Portable Devices

DC/DC Converter

V(BR)DSS

RDS(on)MAX

ID

60 V

2.5Ω@10V

340mA

3Ω@4.5V

72K

NJ7002KDM

SOT

-23 -6L

SOT-23

DONGGUAN NANJING ELECTRONICS LTD.,

Dongguan Nanjing Electronics Ltd.

www.dgnjdz.com

1/5

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NJ7002KDM Datasheet(PDF) 1 Page - Nanjing International Group Co

NJ7002KDM Datasheet(HTML) 1 Page - Nanjing International Group Co

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