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GLT6400L08LL-85ST Datasheet(PDF) 3 Page - List of Unclassifed Manufacturers

No. de pieza GLT6400L08LL-85ST
Descripción Electrónicos  Ultra Low Power 512k x 8 CMOS SRAM
PDF  10 Pages
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Fabricante Electrónico  ETC [List of Unclassifed Manufacturers]
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GLT6400L08LL-85ST Datasheet(HTML) 3 Page - List of Unclassifed Manufacturers

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G -LINK
GLT6400L08
Ultra Low Power 512k x 8 CMOS SRAM
Feb 2001(Rev. 1.1)
G-Link Technology Corporation
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation, Taiwan
6F No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
- 3 -
Absolute Maximum Ratings*
Parameter
Symbol
Minimum
Maximum
Unit
Voltage on Any Pin Relative to Gnd
Vt
-0.5
Vcc+0.3
V
Power Dissipation
PT
-
1.0
W
Storage Temperature (Plastic)
Tstg
-55
+150
°C
Temperature Under Bias
Tbias
-40
+85
°C
*Note : Stresses greater than those listed above Absolute Maximum Ratings may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any conditions outside those indicated
in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
VCC
2.7
3
3.3
V
Supply Voltage
Gnd
0.0
0.0
0.0
V
VIH
2.0
-
VCC+0.2
V
Input Voltage
VIL
-0.5*
-
0.6
V
*
VIL min = -1.0V for pulse width less than tRC/2.



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