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HMJ5 Datasheet(PDF) 1 Page - WJ Communication. Inc. |
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HMJ5 Datasheet(HTML) 1 Page - WJ Communication. Inc. |
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1 / 3 page ![]() Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com Page 1 of 3 March 2006 HMJ5 High Dynamic Range FET Mixer Product Information The Communications Edge TM Product Features x +35 dBm IIP3 x No external matching element Required x RF 40 - 1000 MHz x LO 30 - 900 MHz x IF 5 - 250 MHz x +17 dBm LO Drive Level x +3V at 35mA DC Power Supply x Low Cost Surface Mount J-Lead Package Product Description The HMJ5 is a high dynamic range GaAs FET mixer. This active FET mixer realizes a typical third order intercept point of +35 dBm at an LO drive level of +17 dBm. The HMJ5 comes in a low cost, J-Lead package. Typical applications include frequency up/down conversion, modulation and demodulation for receivers and transmitters used in communications systems. Functional Diagram Function Pin No. IF 2 LO 13 RF 21 +3V 10 Ground All other pins Specifications (1) Parameter Units Min Typ Max Condition RF Frequency Range MHz 40 – 1000 LO Frequency Range MHz 30 – 900 IF Frequency Range MHz 5 – 250 SSB Conversion Loss dB 7.5 9.0 Noise Figure dB 9.5 LO-RF Isolation dB 20 28 LO-IF Isolation dB 24 30 Input IP3 dBm 31 35 RF = 900 MHz @ 0 dBm RF Return Loss dB 11.7 LO Return Loss dB 6.0 IF Return Loss dB 10.9 Input P1dB dBm +23 LO Drive Level dBm +17 DC Current at +3V Bias mA 35 60 Notes: 1. Test conditions unless otherwise noted: 25 ºC, RF = 905 MHz @ -10 dBm, LO = 900MHz @ +17 dBm, IF = 5 MHz. 2. Measured in a 50-Ohm system with nominal LO drive in a downconverter application only, unless otherwise specified. 3. LO frequency must be separated from IF frequency by a minimum of 2 MHz (i.e., | FLO –FIF | Absolute Maximum Rating Ordering Information Parameters Rating Part No. Description Operating Case Temperature -40 to +85 qC HMJ5 High Dynamic Range FET Mixer Storage Temperature -65 to +100 qC HMJ5-PCB Fully Assembled Application Circuit Maximum Input Power +25 dBm Operation of this device above any of these parameters may cause permanent damage. Total sum of LO port and RF port power should not exceed 25 dBm. IF RF LO +3Vdc |
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