PXT4403 datasheet(7/11 Pages) NEXPERIA

7 / 11 page

2004 Nov 22

NXP Semiconductors

Product data sheet

PNP switching transistor

PXT4403

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector-base cut-off current

IE = 0 A; VCB = −40 V

−

−50

IEBO

emitter-base cut-off current

IC = 0 A; VEB = −5 V

−

−50

hFE

DC current gain

IC = −0.1 mA; VCE = −1 V

−

IC = −1 mA; VCE = −1 V

−

IC = −10 mA; VCE = −1 V

100

−

IC = −150 mA; VCE = −2 V

100

300

IC = −500 mA; VCE = −2 V

−

VCEsat

collector-emitter saturation

voltage

IC = −150 mA; IB = −15 mA

−

−400

IC = −500 mA; IB = −50 mA

−

−750

VBEsat

base-emitter saturation voltage

IC = −150 mA; IB = −15 mA

−

−950

IC = −500 mA; IB = −50 mA

−

−1.3

collector capacitance

IE = ie = 0 A; VCB = −10 V; f = 1 MHz

−

8.5

emitter capacitance

IC = ic = 0 A; VEB = −500 mV; f = 1 MHz

−

transition frequency

IC = −20 mA; VCE = −10 V; f = 100 MHz

200

−

MHz

Switching times (between 10% and 90% levels); (see Fig.7)

ton

turn-on time

ICon = −150 mA; IBon = −15 mA;

IBoff = 15 mA

−

delay time

−

rise time

−

toff

turn-off time

−

350

storage time

−

300

fall time

−

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