BFS540 datasheet(2/11 Pages) PHILIPS

2 / 11 page

November 1992

Philips Semiconductors

Product speciﬁcation

NPN 9 GHz wideband transistor

BFS540

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures

excellent reliability

• SOT323 envelope.

DESCRIPTION

NPN transistor in a plastic SOT323

envelope.

It is intended for RF wideband

amplifier applications such as satellite

TV systems and RF portable

communication equipment with signal

frequencies up to 2 GHz.

PINNING

DESCRIPTION

Code: N4

base

emitter

collector

Fig.1 SOT323.

handbook, 2 columns

MBC870

Top view

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

Note

1. Ts is the temperature at the soldering point of the collector tab.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−−

VCEO

collector-emitter voltage

open base

−−

DC collector current

−−

120

Ptot

total power dissipation

up to Ts =80 °C; note 1

−−

500

hFE

DC current gain

IC = 40 mA; VCE = 8 V; Tj =25 °C

120

250

transition frequency

IC = 40 mA; VCE = 8 V; f = 1 GHz;

Tamb =25 °C

−

GHz

GUM

maximum unilateral power gain

IC = 40 mA; VCE = 8 V; f = 900 MHz;

Tamb =25 °C

−

noise ﬁgure

IC = 10 mA; VCE = 8 V; f = 900 MHz;

Tamb =25 °C

−

1.3

1.7

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCES

collector-emitter voltage

RBE =0

−

VEBO

emitter-base voltage

open collector

−

2.5

DC collector current

−

120

Ptot

total power dissipation

up to Ts =80 °C; note 1

−

500

Tstg

storage temperature

−65

150

°C

junction temperature

−

175

°C

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