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BFS20 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BFS20 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page ![]() 1999 Apr 15 3 Philips Semiconductors Product specification NPN medium frequency transistor BFS20 THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 500 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB =20V −− 100 nA IE = 0; VCB = 20 V; Tj = 100 °C −− 10 µA IEBO emitter cut-off current IC = 0; VEB =4V −− 100 nA hFE DC current gain IC = 7 mA; VCE = 10 V 40 85 − VBE base-emitter voltage IC = 7 mA; VCE =10V − 740 900 mV Cc collector capacitance IE =ie = 0; VCB =10V; f=1MHz − 1 − pF Cre feedback capacitance IC = 0; VCB =10V; f=1MHz − 350 − fF fT transition frequency IC = 5 mA; VCE = 10 V; f = 100 MHz 275 450 − MHz |
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