1.

Product profile

1.1 General description

400 W LDMOS packaged asymmetric Doherty power transistor for base station

applications at frequencies from 2110 MHz to 2200 MHz.

[1]

Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.9 dB at 0.01 % probability on

CCDF.

1.2 Features and benefits

 Excellent ruggedness

 High efficiency

 Low thermal resistance providing excellent thermal stability

 Lower output capacitance for improved performance in Doherty applications

 Designed for low memory effects providing excellent digital pre-distortion capability

 Internally matched for ease of use

 Integrated ESD protection

 For RoHS compliance see the product details on the Ampleon website

1.3 Applications

 RF power amplifiers for base stations and multi carrier applications in the 2110 MHz to

2200 MHz frequency range

BLC10G22XS-401AVT

Power LDMOS transistor

Rev. 1 — 20 May 2022

Product data sheet

Table 1.

Typical performance

Typical RF performance at Tcase = 25 C in an asymmetrical Doherty demo circuit. VDS =30V;

IDq = 630 mA (main); VGS(amp)peak = 0.8 V, unless otherwise specified.

Test signal

f

VDS

PL(AV)

Gp



D

ACPR

(MHz)

(V)

(W/dBm)

(dB)

(%)

(dBc)

1-carrier W-CDMA

2110 to 2200

30

56/47.5

15.4

49.3

30 [1]