BCF32 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 22

Philips Semiconductors

Product speciﬁcation

NPN general purpose transistor

BCF32

THERMAL CHARACTERISTICS

Note

Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =32V

−−

100

IE = 0; VCB =32V; Tj = 100 °C

−−

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−−

100

hFE

DC current gain

IC =10 µA; VCE =5V

−

150

−

IC = 2 mA; VCE = 5 V

200

−

450

VCEsat

collector-emitter saturation

voltage

IC = 10 mA; IB = 0.5 mA

−

120

250

IC = 50 mA; IB = 2.5 mA

−

210

−

VBEsat

base-emitter saturation voltage

IC = 10 mA; IB = 0.5 mA

−

750

−

IC = 50 mA; IB = 2.5 mA

−

850

−

VBE

base-emitter voltage

IC = 2 mA; VCE = 5 V

550

−

700

collector capacitance

IE =ie = 0; VCB = 10 V; f = 1 MHz

−

2.5

−

transition frequency

IC = 10 mA; VCE = 5 V; f = 100 MHz 100

−−

MHz

noise ﬁgure

IC = 200 µA; VCE =5V; RS =2kΩ;

f = 1 kHz; B = 200 Hz

−

1.2

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