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BCF30 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BCF30 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 8 page ![]() 1997 May 22 2 Philips Semiconductors Product specification PNP general purpose transistors BCF29; BCF30 FEATURES • Low current (max. 100 mA) • Low voltage (max. 32 V). APPLICATIONS • Low level, low noise general purpose applications in thick and thin-film circuits. DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BCF32 and BCF33. PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector Fig.1 Simplified outline (SOT23) and symbol. handbook, halfpage 2 1 3 MAM256 Top view 2 3 1 MARKING TYPE NUMBER MARKING CODE BCF29 C7p BCF30 C8p QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter −−32 V VCEO collector-emitter voltage open base −−32 V ICM peak collector current −−200 mA Ptot total power dissipation Tamb ≤ 25 °C − 250 mW hFE DC current gain IC = −2 mA; VCE = −5V BCF29 120 260 BCF30 215 500 fT transition frequency IC = −10 mA; VCE = −5 V; f = 100 MHz 100 − MHz |
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